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STPS10L40C

STMicroelectronics
Part Number STPS10L40C
Manufacturer STMicroelectronics
Description Low drop power Schottky rectifier
Published May 13, 2020
Detailed Description STPS10L40C Low drop power Schottky rectifier Datasheet - production data A1 K A2 K A2 K A1 TO-220AB KK A2 A1 D2PAK ...
Datasheet PDF File STPS10L40C PDF File

STPS10L40C
STPS10L40C

Overview
STPS10L40C Low drop power Schottky rectifier Datasheet - production data A1 K A2 K A2 K A1 TO-220AB KK A2 A1 D2PAK A2 A1 Features  Low forward voltage drop meaning very small conduction losses  Low dynamic losses as a result of the schottky barrier  Avalanche capability specified  ECOPACK®2 compliant component for D²PAK on demand Description Dual center tap Schottky rectifier suited for switch mode power supply and high frequency DC to DC converters.
Packaged either in TO-220AB and D2PAK, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.
Table 1: Device summary Symbol Value IF(AV) VRRM Tj (max.
) VF (typ.
) 2x5A 40 V 150 °C 0.
36 V April 2016 DocID9433 Rev 7 This is information on a product in full production.
1/12 www.
st.
com Characteristics STPS10L40C 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM IF(RMS) Repetitive peak reverse voltage Forward rms current 40 V 20 A IF(AV) Average forward current δ = 0.
5, square wave TC = 140 °C Per diode Per device 5 10 A IFSM PARM Tstg Tj Surge non repetitive forward current tp = 10 ms sinusoidal Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C Storage temperature range Maximum operating junction temperature (1) 150 190 -65 to +150 +150 A W °C °C Notes: (1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Symbol Rth(j-c) Junction to case Rth(c) Coupling Table 3: Thermal parameters Parameter Per diode Total - Value 3.
0 1.
7 0.
35 Unit °C/W °C/W When the diodes 1 and 2 are used simultaneously: ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Symbol IR(1) VF(1) Table 4: Static electrical characteristics (per diode) Parameter Test conditions Min.
Typ.
Reverse leakage current Forward voltage drop Tj = 25 °C Tj = 100 °C Tj = 2...


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