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P0460EDA

UNIKC
Part Number P0460EDA
Manufacturer UNIKC
Description N-Channel MOSFET
Published May 14, 2020
Detailed Description P0460EDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2.5Ω @VGS = 10V ID 4A TO-252 AB...
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P0460EDA
P0460EDA

Overview
P0460EDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2.
5Ω @VGS = 10V ID 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 TC = 25 °C TC = 100 °C ID IDM IAS 4 2.
5 20 2 Avalanche Energy3 EAS 20 Power Dissipation TC = 25 °C TC = 100 °C PD 46 18 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V , L = 10mH ,starting TJ = 25°C SYMBOL RqJA RqJC TYPICAL MAXIMUM 62.
5 2.
8 UNITS °C / W REV 1.
0 1 2017/2/8 P0460EDA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SY...


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