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SPR63N10S-C

SeCoS
Part Number SPR63N10S-C
Manufacturer SeCoS
Description N-Channel MOSFET
Published May 19, 2020
Detailed Description Elektronische Bauelemente SPR63 10S-C 63A, 100V, RDS(O ) 9.8mΩ -Channel Enhancement Mode Power MOSFET RoHS Compliant P...
Datasheet PDF File SPR63N10S-C PDF File

SPR63N10S-C
SPR63N10S-C

Overview
Elektronische Bauelemente SPR63 10S-C 63A, 100V, RDS(O ) 9.
8mΩ -Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPR63N10S-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The SPR63N10S-C meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES Lower Gate Charge Advanced high cell density Trench technology Green Device Available MARKING PR-8PP 63N10S = Date code PACKAGE INFORMATION Package MPQ PR-8PP 3K Leader Size 13 inch ORDER INFORMATION Part Number Type SPR63N10S-C Lead (Pb)-free and Halogen-free REF.
A B C D E F Millimeter Min.
Max.
4.
9 5.
1 5.
7 5.
9 5.
95 6.
2 1.
27 BSC.
0.
35 0.
49 0.
1 0.
2 REF.
G H I J K L Millimeter Min.
Max.
0.
8 1.
0 0.
254 Ref.
4.
0 Ref.
3.
4 Ref.
0.
6 Ref.
1.
4 Ref.
SD SD SD GD ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 1 (Silicon Limited) Continuous Drain Current 1 (Package Limited) Pulsed Drain Current 2 4 TC=25°C TC=100°C TC=25°C ID IDM Power Dissipation TC=25°C PD Operating Junction & Storage Temperature Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case 1 TJ, TSTG Thermal Resistance Ratings RθJA RθJC Ratings 100 ±20 63 40 45 160 73.
5 -55~150 50 1.
7 Unit V V A A W °C °C/W http://www.
SeCoSGmbH.
com/ 22-Aug-2019 Rev.
A Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SPR63 10S-C 63A, 100V, RDS(O ) 9.
8mΩ -Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Unit Test Conditions Drain-Source Breakdown Voltage V(BR)DSS 100 - - V VGS=0V, ID=250µA Gate-Threshold Voltage Gate-Source Leakage Current V...


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