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CT3331-R3

CT Micro
Part Number CT3331-R3
Manufacturer CT Micro
Description P-Channel MOSFET
Published May 20, 2020
Detailed Description CT3331-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS - 200 V • Drain-Source On-Resista...
Datasheet PDF File CT3331-R3 PDF File

CT3331-R3
CT3331-R3

Overview
CT3331-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS - 200 V • Drain-Source On-Resistance RDS(ON) 2.
3Ω, at VGS= - 10V, IDS= - 0.
2A RDS(ON) 2.
4Ω, at VGS= - 4.
5V, IDS= - 0.
2A ℃,• Continuous Drain Current at TA=25 ID = - 0.
4A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free • ESD Protection Applications • Switches • Power supply circuits • Motor controls • Drivers Description The CT3331-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .
Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro...


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