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CT3A01-R3

Part Number	CT3A01-R3
Manufacturer	CT Micro
Description	N-Channel MOSFET
Published	May 20, 2020
Detailed Description	CT3A01-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 20 V • Drain-Source On-Resistance...
Datasheet	CT3A01-R3 PDF File

Overview

CT3A01-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 20 V • Drain-Source On-Resistance • RDS(ON) 55mΩ, at VGS= 4.
5V, ID=3.
2A RDS(ON) 65mΩ, at VGS= 2.
5V, ID= 2.
5A RDS(ON) 80mΩ, at VGS= 1.
8V, ID= 2.
0A ℃• Continuous Drain Current at TA=25 ID = 3.
2A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Description The CT3A01-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications.
Applications • Power Management • Portable Equipment • Load switch Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro P...

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CT3A01-R3 N-Channel MOSFET - CT Micro

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