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CT3400-R3

Part Number	CT3400-R3
Manufacturer	CT Micro
Description	N-Channel MOSFET
Published	May 20, 2020
Detailed Description	CT3400-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 30 V • Drain-Source On-Resistance...
Datasheet	CT3400-R3 PDF File

Overview

CT3400-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 30 V • Drain-Source On-Resistance RDS(ON) 23.
5mΩ, at VGS= 10V, IDS= 6.
0A RDS(ON) 26.
5mΩ, at VGS= 4.
5V, IDS= 5.
0A ℃• Continuous Drain Current at TA=25 ID = 5.
8A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • LED Display • DC-DC System • LCD Panel Description The CT3400-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .
Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential ...

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CT3400-R3 N-Channel MOSFET - CT Micro

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