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CT2323-R3

CT Micro
Part Number CT2323-R3
Manufacturer CT Micro
Description P-Channel MOSFET
Published May 20, 2020
Detailed Description CT2323-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS - 20 V • Drain-Source On-Resistan...
Datasheet PDF File CT2323-R3 PDF File

CT2323-R3
CT2323-R3

Overview
CT2323-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS - 20 V • Drain-Source On-Resistance RDS(ON) 30mΩ, at VGS= - 4.
5V, IDS= - 4.
7A RDS(ON) 35mΩ, at VGS= - 2.
5V, IDS= - 4.
1A RDS(ON) 40mΩ, at VGS= - 1.
8V, IDS= - 2.
0A ℃• Continuous Drain Current at TA=25 ID = - 4.
2A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • Portable Equipment • Battery Powered System • DC/DC Converter Package Outline Description The CT2323-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .
Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 4 Jun, 2015 CT2323-R3 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current ℃PD Total Power Dissipation @TA=25 TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient (t=10s) Test Conditions Ratings -20 ±8 -4.
7 -6.
8 1.
35 -55 to 150 -55 to 150 Units V V A A W oC oC Notes 1 1 2 Min Typ Max Units Notes - 200 - oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 4 Jun, 2015 CT2323-R3 P-Channel Enhancement MOSFET Electrical Characteristics TA = 25°C (unless otherwise specified) Static Characteristics Symbol Parameters BVDSS Drain-Source Breakdown Voltage IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Test Conditions VGS=0V, ID= -250µA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V Min Typ Max Units Notes -20 - - V - - -1 µA - - ±100 nA On Characteristics Symbol Parameters RDS(ON) Drain-Source On-Resistance VGS(TH) Gate-Source Threshold Voltage Test Conditions VGS = -4.
5V, ID = -4.
7A VGS = -2.
5V, ID = -4.
1...


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