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CTL1103NS

Part Number	CTL1103NS
Manufacturer	CT Micro
Description	N-Channel MOSFET
Published	May 20, 2020
Detailed Description	CTL1103NS N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 30 V  Drain-Source On-Resistance...
Datasheet	CTL1103NS PDF File

Overview

CTL1103NS N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 30 V  Drain-Source On-Resistance RDS(ON) 8.
5m, at VGS= 10V, IDS= 5.
5A RDS(ON) 12m, at VGS= 4.
5V, IDS= 5.
5A  Continuous Drain Current at TC=25℃ ID = 11A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Applications  Power Management  Lithium Ion Battery Description The CTL1103NS uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .
Package Outline Schematic Pin 1 Source: Gate: Drain: 1, 2, 3 4 5, 6, 7, 8 CT Micro Proprietary & Confidential Page 1 Rev 1 ...

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CTL1103NS N-Channel MOSFET - CT Micro

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