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CTH1606NS-T52

Part Number	CTH1606NS-T52
Manufacturer	CT Micro
Description	N-Channel MOSFET
Published	May 20, 2020
Detailed Description	CTH1606NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 60V  Drain-Source On-Resista...
Datasheet	CTH1606NS-T52 PDF File

Overview

CTH1606NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 60V  Drain-Source On-Resistance RDS(ON) 52m, at VGS= 10V, ID= 15A RDS(ON) 70m, at VGS= 4.
5V, ID= 10A  Continuous Drain Current at TC=25℃ID =16A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTH1606NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application.
Applications  DC/DC Converter  Load Switch  LCD Display inverter...

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CTH1606NS-T52 N-Channel MOSFET - CT Micro

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