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CTLM17NS10-R3

Part Number	CTLM17NS10-R3
Manufacturer	CT Micro
Description	N-Channel MOSFET
Published	May 20, 2020
Detailed Description	CTLM17NS10-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 100 V • Drain-Source On-Resis...
Datasheet	CTLM17NS10-R3 PDF File

Overview

CTLM17NS10-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 100 V • Drain-Source On-Resistance RDS(ON) 3Ω, at VGS= 10V, ID= 100mA RDS(ON) 3Ω, at VGS= 4.
5V, ID= 100mA ℃• Continuous Drain Current at TA=25 ID =0.
17A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Description The CTLM17NS10-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Applications • Power Management • LCD Display inverter • DC/DC Converter • Load Switch Package Outline Schematic Drain Drain ...

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CTLM17NS10-R3 N-Channel MOSFET - CT Micro

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