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CTL0036NS-R3

Part Number	CTL0036NS-R3
Manufacturer	CT Micro
Description	N-Channel MOSFET
Published	May 20, 2020
Detailed Description	CTL0036NS-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 60 V • Drain-Source On-Resista...
Datasheet	CTL0036NS-R3 PDF File

Overview

CTL0036NS-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 60 V • Drain-Source On-Resistance RDS(ON) 3.
0Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.
0Ω, at VGS= 4.
5V, IDS= 200mA ℃• Continuous Drain Current at TA=25 , ID = 300mA • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free • ESD protection 1.
5KV Applications • Cellular phone • Notebook • Power management Package Outline Description The CTL0036NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Schematic Drain Drain ...

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CTL0036NS-R3 N-Channel MOSFET - CT Micro

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