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CT8124-T52

CT Micro
Part Number CT8124-T52
Manufacturer CT Micro
Description N-Channel MOSFET
Published May 20, 2020
Detailed Description CT8124-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS = 20V  Drain-Source On-Resistan...
Datasheet PDF File CT8124-T52 PDF File

CT8124-T52
CT8124-T52

Overview
CT8124-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS = 20V  Drain-Source On-Resistance RDS(ON) 23m, at VGS= 4.
5V, ID= 5.
0A RDS(ON) 27m, at VGS= 2.
5V, ID= 3.
5A RDS(ON) 34m, at VGS= 1.
8V, ID= 2.
8A  Continuous Drain Current at TC=25℃ID = 9.
0A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CT8124 –T52 uses high performance Trench Technology to provide excellent RDS(ON)and low gate charge which is suitable for most of the synchronous buck converter applications .
Applications  Notebook  High side switching  Power Management Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Aug, 2015 CT8124-T52 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current @TC=25℃ IDM Pulsed Drain Current PD Total Power Dissipation @TC=25℃ TSTG ...


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