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CTL0353PS-R3

Part Number	CTL0353PS-R3
Manufacturer	CT Micro
Description	P-Channel MOSFET
Published	May 20, 2020
Detailed Description	CTL0353PS-R3 P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS -30 V  Drain-Source On-Resist...
Datasheet	CTL0353PS-R3 PDF File

Overview

CTL0353PS-R3 P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS -30 V  Drain-Source On-Resistance RDS(ON) 58m, at VGS= -10V, ID= -3.
2A RDS(ON) 75m, at VGS= -4.
5V, ID= -2.
5A  Continuous Drain Current at TC=25℃ID = -3.
0A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Applications  Power Management  Lithium Ion Battery Description The CTL0353PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such a...

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CTL0353PS-R3 P-Channel MOSFET - CT Micro

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