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CT2301-R3

CT Micro
Part Number CT2301-R3
Manufacturer CT Micro
Description P-Channel MOSFET
Published May 20, 2020
Detailed Description CT2301-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS - 20 V • Drain-Source On-Resistan...
Datasheet PDF File CT2301-R3 PDF File

CT2301-R3
CT2301-R3

Overview
CT2301-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS - 20 V • Drain-Source On-Resistance RDS(ON) 85mΩ, at VGS= - 4.
5V, IDS= - 3.
0A RDS(ON) 100mΩ, at VGS= - 2.
5V, IDS= - 2.
0A ℃• Continuous Drain Current at TA=25 ID = - 3.
0A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • Portable Equipment • Battery Powered System • Load Switch Description The CT2301-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .
Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 4 Aug, 2015 CT2301-R3 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current PD Total Power Dissipation TSTG Storag...


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