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SMS2009E-C

SeCoS
Part Number SMS2009E-C
Manufacturer SeCoS
Description N-Channel MOSFET
Published May 23, 2020
Detailed Description Elektronische Bauelemente SMS2009E-C 0.8A, 20V, RDS(ON) 350mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Produc...
Datasheet PDF File SMS2009E-C PDF File

SMS2009E-C
SMS2009E-C

Overview
Elektronische Bauelemente SMS2009E-C 0.
8A, 20V, RDS(ON) 350mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SMS2009E-C is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in DC-DC conversion, load switch and level shift.
FEATURES Reliable and Rugged Green Device Available ESD Protection MARKING W28 = Date Code PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch SOT-23 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
10 3.
00 1.
20 1.
80 0.
89 1.
3 1.
70 2.
3 0.
30 0.
50 REF.
G H J K L Millimeter Min.
Max.
0 0.
18 0.
55 REF.
0.
08 0.
26 0.
6 REF.
0.
95 BSC.
ORDER INFORMATION Part Number Type SMS2009E-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1, VGS=4.
5V Pulsed Drain Current 3 TA=25°C TA=70°C Power Dissipation TA=25°C Operating Junction & Storage Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 2 Thermal Resistance Junction-Case 1 Symbol VDS VGS ID IDM PD TJ, TSTG Thermal Data RθJA RθJC http://www.
SeCoSGmbH.
com/ 26-Jul-2018 Rev.
C Ratings 20 ±12 0.
8 0.
64 3.
2 0.
35 -55~150 357 500 250 Unit V V A A W °C °C/W Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SMS2009E-C 0.
8A, 20V, RDS(ON) 350mΩ N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage BVDSS 20 - - Gate Threshold Voltage VGS(TH) 0.
45 - 1 Gate-Source Leakage Current IGSS - - ±10 TJ=25°C Drain-Source Leakage Current TJ=70°C IDSS - -1 - 25 - - 350 Static Drain-Source On-Resistance 4 RDS(ON) - - 660 - - 1200 Total Gate Ch...


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