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SSI2007

SeCoS
Part Number SSI2007
Manufacturer SeCoS
Description Power MOSFET
Published May 23, 2020
Detailed Description Elektronische Bauelemente SSI2007 N-Ch: 0.8A, 20V, RDS(ON) 260 mΩ P-Ch: -0.56A, -20V, RDS(ON) 800 mΩ N & P-Ch Enhanceme...
Datasheet PDF File SSI2007 PDF File

SSI2007
SSI2007

Overview
Elektronische Bauelemente SSI2007 N-Ch: 0.
8A, 20V, RDS(ON) 260 mΩ P-Ch: -0.
56A, -20V, RDS(ON) 800 mΩ N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SSI2007 is N and P Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge.
This device is suitable for use in DC-DC conversion, load switch and level shift.
MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage APPLICATION DC-DC converter circuit Load Switch DEVICE MARKING: 07* Date Code PACKAGE INFORMATION Package MPQ SOT-563 3K Leader Size 7’ inch SOT-563 A B J D CF GH E REF.
A B C D E Millimeter Min.
Max.
1.
50 1.
50 1.
70 1.
70 0.
525 0.
60 1.
10 1.
30 - 0.
05 REF.
F G H J Millimeter Min.
Max.
0.
09 0.
16 0.
45 0.
55 0.
17 0.
27 0.
10 0.
30 Top View MAXIMUM RATINGS (TA = 25°C unless otherwise speci...


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