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KPM11N60D

KEC
Part Number KPM11N60D
Manufacturer KEC
Description N-Channel MOSFET
Published May 29, 2020
Detailed Description SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast sw...
Datasheet PDF File KPM11N60D PDF File

KPM11N60D
KPM11N60D

Overview
SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge, low EMI characteristics and excellent avalanche characteristics.
It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES VDSS=600V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.
38 @VGS=10V Qg(typ.
)= 24nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 TC=25 Drain Current TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note ...


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