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KPM8N60F

KEC
Part Number KPM8N60F
Manufacturer KEC
Description N-Channel MOSFET
Published May 29, 2020
Detailed Description SEMICONDUCTOR TECHNICAL DATA KPM8N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This Super Junction MO...
Datasheet PDF File KPM8N60F PDF File

KPM8N60F
KPM8N60F

Overview
SEMICONDUCTOR TECHNICAL DATA KPM8N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge, low EMI characteristics and excellent avalanche characteristics.
It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=0.
58 @VGS=10V Qg(typ.
)=16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Ene...


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