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SSF3608-C

SeCoS
Part Number SSF3608-C
Manufacturer SeCoS
Description P-Channel MOSFET
Published Jun 5, 2020
Detailed Description Elektronische Bauelemente SSF3608-C -1.4A, -20V, RDS(O ) 300mΩ P-Channel Enhancement Mode Power MOSFET FEATURES -20V/ ...
Datasheet PDF File SSF3608-C PDF File

SSF3608-C
SSF3608-C

Overview
Elektronische Bauelemente SSF3608-C -1.
4A, -20V, RDS(O ) 300mΩ P-Channel Enhancement Mode Power MOSFET FEATURES -20V/ -1.
4A RDS(ON)≦300mΩ@VGS= -4.
5V RDS(ON)≦390mΩ@VGS= -2.
5V RDS(ON)≦700mΩ@VGS= -1.
8V Reliable and Rugged Green Device Available APPLICATION Interfacing Switching RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 A L 3 Top View CB 12 KE 1 D F GH 3 2 J MARKING 3608 PACKAGE INFORMATION Package MPQ SOT-323 3K Leader Size 7 inch REF.
A B C D E F Millimeter Min.
Max.
1.
80 2.
20 1.
80 2.
55 1.
1 1.
4 0.
80 1.
15 1.
20 2.
00 0.
15 0.
50 REF.
G H J K L Millimeter Min.
Max.
0.
1 REF.
0.
525 REF.
0.
05 0.
25 0.
8 TYP.
0.
65 TYP.
ORDER INFORMATION Part Number Type SSF3608-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current 2,VGS=4.
5V Pulsed Drain Current 1 Power Dissipation 2 TA=25°C TA=25°C VGS ID IDM PD Operating Junction and Storage Temperature TJ, TSTG Thermal Resistance Ratings Thermal Resistance Junction-ambient 2 Thermal Resistance Junction-ambient 3 RθJA Ratings -20 ±8 -1.
4 -2.
8 350 150, -55~150 357 625 Unit V V A A mW °C °C/W http://www.
SeCoSGmbH.
com/ 10-Dec-2018 Rev.
A Any changes of specification will not be informed individually.
Page 1 of 5 Elektronische Bauelemente SSF3608-C -1.
4A, -20V, RDS(O ) 300mΩ P-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage BVDSS -20 - - Gate-Threshold Voltage Gate-Source Leakage Current VGS(th) IGSS -0.
3 - - -1 - ±100 Drain-Source Leakage Current Static Drain-Source On-Resistance 4 IDSS RDS(ON) - - -1 - 300 - 390 - - 700 Total Gate Charge Gate-Source Charge Qg - 2 Qgs - 0.
36 - Gate-Drain (“Miller”) Charge Turn-on Delay Time Rise Time Qgd - 0.
58 - Td(on) - 8.
7 - Tr - 61.
2 - Turn-off Delay Time Fall Ti...


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