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V10D120C

Part Number	V10D120C
Manufacturer	Vishay
Description	Trench MOS Barrier Schottky Rectifier
Published	Jun 8, 2020
Detailed Description	www.vishay.com V10D120C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier U...
Datasheet	V10D120C PDF File

Overview

www.
vishay.
com V10D120C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.
53 V at IF = 2.
5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View V10D120C Anode 1 K Anode 2 Cathode LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.
0 A (TA = 125 °C) TJ max.
Package 2 x 5.
0 A 120 V 100 A 0.
64 V 150 °C SMPD (TO-263AC) Circuit configuration Common cathode FEATURES • Trench MOS Schottky technology Available • Very low profile - typical height of 1.
7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meet...

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