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BAT54WS-G

Vishay
Part Number BAT54WS-G
Manufacturer Vishay
Description Small Signal Schottky Diode
Published Jun 9, 2020
Detailed Description www.vishay.com BAT54WS-G Vishay Semiconductors Small Signal Schottky Diode DESIGN SUPPORT TOOLS click logo to get sta...
Datasheet PDF File BAT54WS-G PDF File

BAT54WS-G
BAT54WS-G

Overview
www.
vishay.
com BAT54WS-G Vishay Semiconductors Small Signal Schottky Diode DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOD-323 Weight: approx.
4.
0 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box FEATURES • These diodes feature very low turn-on voltage and fast switching • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • AEC-Q101 qualified available (part number on request) • Base P/N-G3 - green, commercial grade • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 PARTS TABLE PART ORDERING CODE BAT54WS-G BAT54WS-G3-08 or BAT54WS-G3-18 CIRCUIT CONFIGURATION Single TYPE MARKING L8 REMARKS Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Repetitive peak reverse voltage Forward continuous current (1) Repetitive peak forward current (1) Surge forward current (1) Power dissipation (1) tp < 1 s VRRM IF IFRM IFSM Ptot Note (1) Valid provided that electrodes are kept at ambient temperature VALUE 30 200 300 600 150 THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Thermal resistance junction to ambient air (1) Maximum junction temperature Storage temperature range Operating temperature range RthJA Tj Tstg Top Note (1) Valid provided that electrodes are kept at ambient temperature VALUE 650 125 -65 to +150 -55 to +125 ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN.
Reverse breakdown voltage Leakage current (1) Forward voltage (1) Diode capacitance Reserve recovery time Tested with 100 μA pulses V(BR) 30 VR = 25 V IR IF = 0.
1 mA VF IF = 1 mA VF IF = 10 mA VF IF = 30 mA VF IF = 100 mA VF VR = 1 V, f = 1 MHz CD IF = 10 mA, IR = 10 mA, iR = 1 mA, RL = 1...


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