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SIGC07T60SNC

Part Number	SIGC07T60SNC
Manufacturer	Infineon
Description	IGBT
Published	Jun 9, 2020
Detailed Description	IGBT Chip in NPT-technology FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature co...
Datasheet	SIGC07T60SNC PDF File

Overview

IGBT Chip in NPT-technology FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling SIGC07T60SNC This chip is used for: • DuoPack SKP06N60 Applications: • drives C G E Chip Type SIGC07T60SNC SIGC07T60SNC VCE ICn 600V 6A 600V 6A Die Size 2.
6 x 2.
6 mm2 2.
6 x 2.
6 mm2 Package Ordering Code sawn on foil unsawn Q67041-A4672A003 Q67041-A4672A002 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 2.
6 x 2.
6 mm2 6.
76 / 4.
3 1.
107 x 1.
78 0.
5 x 0.
7 100 µm 150 mm 0 //180 deg 2249 Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.
65mm ; max 1.
2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies AI PS DD HV3, L 7212-S, Edition 2, 28.
11.
2003 SIGC07T60SNC MAXIMUM RATINGS: Parameter Symbol Value Unit Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax VCE IC 600 V 1) A Pulsed collector current, tp limited by Tjmax Icpuls 18 A Gate emitter voltage VGE ±20 V Operating junction and storage temperature 1 ) depending on thermal properties of assembly Tj, Tstg -55 .
.
.
+150 °C STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Parameter Symbol Conditions Value Unit min.
typ.
max.
Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current V(BR)CES VGE=0V, IC=500µA 600 VCE(sat) VGE=15V, IC=6A 1.
6 2 2.
5 V VGE(th) IC=200µA, VGE=VCE 3 4 5 ICES VCE=600V, VGE=0V 0.
55 µA IGES VCE=0V, VGE=20V 120 n...

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