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SIDC81D120H8

Infineon
Part Number SIDC81D120H8
Manufacturer Infineon
Description Fast switching diode
Published Jun 10, 2020
Detailed Description SIDC81D120H8 Fast switching diode chip in Emitter Controlled Technology Features:  1200V Emitter Controlled technolog...
Datasheet PDF File SIDC81D120H8 PDF File

SIDC81D120H8
SIDC81D120H8

Overview
SIDC81D120H8 Fast switching diode chip in Emitter Controlled Technology Features:  1200V Emitter Controlled technology 120 µm chip  Soft, fast switching  Low reverse recovery charge  Small temperature coefficient  Qualified according to JEDEC for target applications Recommended for:  Power modules and discrete devices Applications:  SMPS, resonant applications, drives Chip Type VR IFn SIDC81D120H8 1200V 150A Die Size 9 x 9 mm2 Package sawn on foil Mechanical Parameters Die size Area total Anode pad size Thickness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Storage environment for original and sealed MBB bags for open MBB bags 9x9 81 mm2 8.
046 x 8.
046 120 µm 200 mm 315 Photoimide 3200 nm AlSiCu Ni Ag – system To achieve a reliable solder connection it is strongly recommended not to consume the Ni layer completely during production process Electrically conductive epoxy glue and soft solder Al,  500 µm  0.
65 mm; max 1.
2 mm Ambient atmosphere air, Temperature 17 °C – 25 °C, < 6 months Acc.
to IEC62258-3: Atmosphere > 99% Nitrogen or inert gas, Humidity < 25% RH, Temperature 17 °C – 25 °C, < 6 months Edited by INFINEON Technologies, L4061C, Rev 2.
1, 14.
10.
2015 SIDC81D120H8 Maximum Ratings Parameter Symbol Repetitive peak reverse voltage VRRM Continuous forward current IF Maximum repetitive forward current²) IFR M Junction temperature range Tvj Operating junction temperature Tvj 1) depending on thermal properties of assembly 2) not subject to production test - verified by design/characterisation Condition Tvj = 25 °C Tvj < 150 °C Tvj < 150 °C Value 1200 1) 300 -40.
.
.
+175 -40.
.
.
+150 Unit V A C C Static Characteristics (tested on wafer), Tvj = 25 °C Parameter Symbol Condition Reverse leakage current IR Cathode-Anode breakdown voltage VBR Forward voltage drop VF VR = 1200V IR = 0.
25 mA IF = 45A min.
1200 1.
06 Value typ.
1.
2...


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