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SIDC30D120H8

Infineon
Part Number SIDC30D120H8
Manufacturer Infineon
Description Fast switching diode
Published Jun 10, 2020
Detailed Description SIDC30D120H8 Fast switching diode chip in Emitter Controlled Technology Features:  1200V Emitter Controlled technolog...
Datasheet PDF File SIDC30D120H8 PDF File

SIDC30D120H8
SIDC30D120H8

Overview
SIDC30D120H8 Fast switching diode chip in Emitter Controlled Technology Features:  1200V Emitter Controlled technology 120 µm chip  Soft, fast switching  Low reverse recovery charge  Small temperature coefficient  Qualified according to JEDEC for target applications Recommended for:  Power modules and discrete devices Applications:  SMPS, resonant applications, drives Chip Type VR IFn SIDC30D120H8 1200V 50A Die Size 5.
5 x 5.
5 mm2 Package sawn on foil Mechanical Parameters Die size Area total 5.
5 x 5.
5 30.
25 mm2 Anode pad size 4.
78 x 4.
78 Thickness 120 µm Wafer size 200 mm Max.
possible chips per wafer 891 Passivation frontside Photoimide Pad metal 3200 nm AlS...


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