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SIDC14D60C8

Infineon
Part Number SIDC14D60C8
Manufacturer Infineon
Description Fast switching diode
Published Jun 10, 2020
Detailed Description SIDC14D60C8 Fast switching diode chip in Emitter Controlled 3 -Technology A Features: • 600V Emitter Controlled 3 tech...
Datasheet PDF File SIDC14D60C8 PDF File

SIDC14D60C8
SIDC14D60C8

Overview
SIDC14D60C8 Fast switching diode chip in Emitter Controlled 3 -Technology A Features: • 600V Emitter Controlled 3 technology 70 µm chip This chip is used for: • Power module • Discrete components • soft, fast switching C • low reverse recovery charge • small temperature coefficient Applications: • Drives Chip Type SIDC14D60C8 VR IF 600V 50A Die Size 4.
6 x 3.
05 mm2 Package sawn on foil Mechanical Parameters Raster size Area total Anode pad size Thickness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 4.
6 x 3.
05 14.
03 mm2 3.
9 x 2.
35 70 µm 200 mm 1960 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤500µm ∅ 0.
65mm; max 1.
2mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, IMM PSD, L4024M, Edition 1.
2, 08.
07.
10 SIDC14D60C8 Maximum Ratings Parameter Symbol Condition Repetitive peak reverse voltage Continuous forward current Maximum repetitive forward current Junction temperature range Operating junction temperature Dynamic ruggedness²) VRRM IF IFRM Tvj Tvj Pmax Tvj = 25 °C Tvj < 150°C Tvj < 150°C I F m a x = 100A, V R m a x = 600V, Tvj ≤ 150°C 1 ) depending on thermal properties of assembly 2 ) not subject to production test - verified by design/characterisation Value 600 1) 100 -40.
.
.
+175 -40.
.
.
+150 tbd Unit V A °C °C kW Static Characteristics (tested on wafer), Tvj = 25 °C Parameter Symbol Conditions Reverse leakage current IR Cathode-Anode breakdown Voltage VBR Diode forward voltage VF VR=600V IR=0.
25mA IF=50A Value Unit min.
typ.
max.
27 µA 600 V 1.
2 1.
6 1.
9 V Further Electrical Characteristics Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore n...


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