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SIDC112D170H

Infineon
Part Number SIDC112D170H
Manufacturer Infineon
Description Fast switching diode
Published Jun 10, 2020
Detailed Description Fast switching diode Features: • 1700V technology, Emitter Controlled Diode 3th generation, 200 µm chip • soft, fast swi...
Datasheet PDF File SIDC112D170H PDF File

SIDC112D170H
SIDC112D170H

Overview
Fast switching diode Features: • 1700V technology, Emitter Controlled Diode 3th generation, 200 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient SIDC112D170H A This chip is used for: • power modules C Applications: • resonant applications, drives Chip Type SIDC112D170H VR IF 1700V 205A Die Size 11.
8 x 9.
52 mm2 Package sawn on foil Mechanical Parameters Raster size Area total Anode pad size Thickness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 11.
8 x 9.
52 112.
3 mm2 9.
78 x 7.
5 200 µm 150 mm 114 Photoimide 3200 nm AlSiCu...


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