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IDC51D120T6H

Infineon
Part Number IDC51D120T6H
Manufacturer Infineon
Description Diode
Published Jun 10, 2020
Detailed Description IDC51D120T6H Diode EMCON 4 High Power Chip FEATURES: • 1200V EMCON 4 technology • soft, fast switching This chip is u...
Datasheet PDF File IDC51D120T6H PDF File

IDC51D120T6H
IDC51D120T6H

Overview
IDC51D120T6H Diode EMCON 4 High Power Chip FEATURES: • 1200V EMCON 4 technology • soft, fast switching This chip is used for: • medium / high power modules A • low reverse recovery charge • small temperature coefficient C Applications: • medium / high power drives Chip Type IDC51D120T6H VR IF 1200V 100A Die Size 7.
00 x 7.
30 mm2 Package sawn on foil MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Pad metall Backside metall Die bond Wire bond Reject ink dot size Recommended storage environment 7.
00 x 7.
30 51.
10 / 39.
99 mm2 6.
046 x 6.
346 120 µm 150 mm 180 deg 277 pcs Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.
65mm; max 1.
2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, AIM PMD D...


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