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IRGB4630DPbF

Infineon
Part Number IRGB4630DPbF
Manufacturer Infineon
Description IGBT
Published Jun 10, 2020
Detailed Description VCES = 600V IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications • Industrial Mot...
Datasheet PDF File IRGB4630DPbF PDF File

IRGB4630DPbF
IRGB4630DPbF

Overview
VCES = 600V IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ.
= 1.
65V @ IC = 18A Applications • Industrial Motor Drive • Inverters • UPS • Welding IR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C C E C G IRGB4630DPbF TO-220AB C GC E IRGP4630DPbF TO-247AC GCE IRGP4630D-EPbF TO-247AD C G E n-channel G Gate E GC IRGIB4630DPbF TO-220AB Full-Pak C Collector GC E IRGS4630DPbF D2Pak E Emitter Features Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175°C Improved reliabilit...


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