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FD600R06ME3_S2

Part Number	FD600R06ME3_S2
Manufacturer	Infineon
Description	IGBT
Published	Jun 10, 2020
Detailed Description	TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD600R06ME3_S2 EconoDUAL™3ModulmitTrench/F...
Datasheet	FD600R06ME3_S2 PDF File

Overview

TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD600R06ME3_S2 EconoDUAL™3ModulmitTrench/FeldstoppIGBT3undEmitterControlled3DiodeundNTC EconoDUAL™3modulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandNTC VorläufigeDaten/PreliminaryData TypischeAnwendungen • Chopper-Anwendungen ElektrischeEigenschaften • Tvjop=150°C MechanischeEigenschaften • Standardgehäuse VCES = 600V IC nom = 600A / ICRM = 1200A TypicalApplications • ChopperApplications ElectricalFeatures • Tvjop=150°C MechanicalFeatures • StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CU approvedby:MK ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 20-21 22-23 dateofpublication:2013-10-03 revision:2.
4 ULapproved(E83335) 1 TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD600R06ME3_S2 IGBT,Brems-Chopper/IGBT,Brake-Chopper HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 150°C PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 150 Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VorläufigeDaten PreliminaryData VCES IC nom ICRM Ptot VGES 600 600 1200 2250 +/-20 V A A W V CharakteristischeWerte/CharacteristicValues Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 600 A, VGE = 15 V IC = 600 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 24,0 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V .
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+15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapa...

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FD600R06ME3_S2 IGBT - Infineon

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