DatasheetsPDF.com

FD400R12KE3_B5

Infineon
Part Number FD400R12KE3_B5
Manufacturer Infineon
Description IGBT
Published Jun 10, 2020
Detailed Description TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD400R12KE3_B5 62mmC-SerienModulmitTrench...
Datasheet PDF File FD400R12KE3_B5 PDF File

FD400R12KE3_B5
FD400R12KE3_B5

Overview
TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD400R12KE3_B5 62mmC-SerienModulmitTrench/FeldstopIGBT3undEmitterControlledHighEfficiencyReihendiode 62mmC-seriesmodulewithtrench/fieldstopIGBT3andEmitterControlledHighEfficiencyseriesdiode VorläufigeDaten IGBT,Brems-Chopper/IGBT,Brake-Chopper PreliminaryData HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES  1200 V Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C IC nom IC  400 580  A A PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM  800 A Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 150 Ptot  2000 W Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage  VGES  +/-20 V CharakteristischeWerte/CharacteristicValues Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 400 A, VGE = 15 V IC = 400 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 16,0 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V .
.
.
+15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 400 A, VCE = 600 V VGE = ±15 V RGon = 1,8 Ω Tvj = 25°C Tvj = 125°C Anstiegszeit,induktiveLast Risetime,inductiveload IC = 400 A, VCE = 600 V VGE = ±15 V RGon = 1,8 Ω Tvj = 25°C Tvj = 125°C Abschaltverzögerungszeit,induktiveLast ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)