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DF75R12W1H4F_B11

Infineon
Part Number DF75R12W1H4F_B11
Manufacturer Infineon
Description IGBT
Published Jun 11, 2020
Detailed Description DF75R12W1H4F_B11 EasyPACKModulundPressFIT/NTC EasyPACKmoduleandPressFIT/NTC J TypischeAnwendungen • SolarAn...
Datasheet PDF File DF75R12W1H4F_B11 PDF File

DF75R12W1H4F_B11
DF75R12W1H4F_B11

Overview
DF75R12W1H4F_B11 EasyPACKModulundPressFIT/NTC EasyPACKmoduleandPressFIT/NTC J TypischeAnwendungen • SolarAnwendungen ElektrischeEigenschaften • CoolSiC(TM)SchottkyDiodeGen5 • NiedrigeSchaltverluste MechanischeEigenschaften • 3kVAC1minIsolationsfestigkeit • Al2O3 Substrat mit kleinem thermischen Widerstand • IntegrierterNTCTemperaturSensor • KompaktesDesign • PressFITVerbindungstechnik VCES = 1200V IC nom = 75A / ICRM = 150A TypicalApplications • Solarapplications ElectricalFeatures • CoolSiC(TM)Schottkydiodegen5 • Lowswitchinglosses MechanicalFeatures • 3kVAC1mininsulation • Al2O3substratewithlowthermalresistance • IntegratedNTCtemperaturesensor • Compactdesign • PressFITcontacttechnology ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 20-21 22-23 Datasheet www.
infineon.
com PleasereadtheImportantNoticeandWarningsattheendofthisdocument V3.
2 2017-03-31 DF75R12W1H4F_B11 Bypass-Diode/Bypass-Diode HöchstzulässigeWerte/MaximumRatedValues PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage Tvj = 25°C DurchlassstromGrenzeffektivwertproChip MaximumRMSforwardcurrentperchip TH = 100°C GleichrichterAusgangGrenzeffektivstrom MaximumRMScurrentatrectifieroutput TH = 100°C StoßstromGrenzwert Surgeforwardcurrent tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C Grenzlastintegral I²t-value tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C CharakteristischeWerte/CharacteristicValues Durchlassspannung Forwardvoltage Tvj = 150°C, IF = 50 A Sperrstrom Reversecurrent Tvj = 150°C, VR = 1200 V Wärmewiderstand,ChipbisKühlkörper Thermalresistance,junctiontoheatsink proDiode/perdiode TemperaturimSchaltbetrieb Temperatureunderswitchingconditions VerpolschutzDiodeA/Inver...


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