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FP15R12W1T4_B11

Infineon
Part Number FP15R12W1T4_B11
Manufacturer Infineon
Description IGBT
Published Jun 11, 2020
Detailed Description TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP15R12W1T4_B11 IGBT,Wechselrichter/IGBT,In...
Datasheet PDF File FP15R12W1T4_B11 PDF File

FP15R12W1T4_B11
FP15R12W1T4_B11

Overview
TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP15R12W1T4_B11 IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 175°C Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage  VorläufigeDaten PreliminaryData VCES  IC nom IC  ICRM  Ptot  VGES  1200 15 28 30 130 +/-20 V  A A A W V CharakteristischeWerte/CharacteristicValues Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 15 A, VGE = 15 V IC = 15 A, VGE = 15 V IC = 15 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 0,48 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V .
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+15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 15 A, VCE = 600 V VGE = ±15 V RGon = 39 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C Anstiegszeit,induktiveLast Risetime,inductiveload IC = 15 A, VCE = 600 V VGE = ±15 V RGon = 39 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload IC = 15 A, VCE = 600 V VGE = ±15 V RGoff = 39 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C Fallzeit,induktiveLast Falltime,indu...


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