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F4-50R12KS4

Infineon
Part Number F4-50R12KS4
Manufacturer Infineon
Description IGBT
Published Jun 11, 2020
Detailed Description TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F4-50R12KS4 IGBT,Wechselrichter/IGBT,Invert...
Datasheet PDF File F4-50R12KS4 PDF File

F4-50R12KS4
F4-50R12KS4

Overview
TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F4-50R12KS4 IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 70°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 150 Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage  VorläufigeDaten PreliminaryData VCES  IC nom IC  ICRM  Ptot  VGES  1200 50 70 100 355 +/-20 V  A A A W V CharakteristischeWerte/CharacteristicValues Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 50 A, VGE = 15 V IC = 50 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 2,00 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V .
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+15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 50 A, VCE = 600 V VGE = ±15 V RGon = 13 Ω Tvj = 25°C Tvj = 125°C Anstiegszeit,induktiveLast Risetime,inductiveload IC = 50 A, VCE = 600 V VGE = ±15 V RGon = 13 Ω Tvj = 25°C Tvj = 125°C Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload IC = 50 A, VCE = 600 V VGE = ±15 V RGoff = 13 Ω Tvj = 25°C Tvj = 125°C Fallzeit,induktiveLast Falltime,inductiveload IC = 50 A, VCE = 600 V VGE = ±15 V RGoff = 13 Ω Tvj = 25°C Tvj ...


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