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FS150R12KT4_B9

Infineon
Part Number FS150R12KT4_B9
Manufacturer Infineon
Description IGBT
Published Jun 12, 2020
Detailed Description TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FS150R12KT4_B9 EconoPACK™3ModulmitTrench/F...
Datasheet PDF File FS150R12KT4_B9 PDF File

FS150R12KT4_B9
FS150R12KT4_B9

Overview
TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FS150R12KT4_B9 EconoPACK™3ModulmitTrench/FeldstopIGBT4undverdoppelterEmitterControlled4DiodenBestückung EconoPACK™3modulewithtrench/fieldstopIGBT4anddoubledmountingEmitterControlled4diode VorläufigeDaten IGBT,Wechselrichter/IGBT,Inverter PreliminaryData HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES  1200 V Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 95°C, Tvj max = 175°C IC nom  150 A PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM  300 A Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot  750 W Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage  VGES  +/-20 V CharakteristischeWerte/CharacteristicValues Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 150 A, VGE = 15 V IC = 150 A, VGE = 15 V IC = 150 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 5,30 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V .
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+15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 150 A, VCE = 600 V VGE = ±15 V RGon = 1,1 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C Anstiegszeit,induktiveLast Risetime,inductiveload IC = 150 A, VCE = 600 V VGE = ±15 V RGon = 1,1 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C Abschaltverzögerungszeit,indu...


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