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FD600R17KE3_B2

Infineon
Part Number FD600R17KE3_B2
Manufacturer Infineon
Description IGBT
Published Jun 12, 2020
Detailed Description TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD600R17KE3_B2 IGBT,Brems-Chopper/IGBT,Br...
Datasheet PDF File FD600R17KE3_B2 PDF File

FD600R17KE3_B2
FD600R17KE3_B2

Overview
TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD600R17KE3_B2 IGBT,Brems-Chopper/IGBT,Brake-Chopper HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 150°C Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage  VorläufigeDaten PreliminaryData VCES  IC nom IC  ICRM  Ptot  VGES  1700 600 950 1200 4,30 +/-20 V  A A A  kW V CharakteristischeWerte/CharacteristicValues Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 600 A, VGE = 15 V IC = 600 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 24,0 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V .
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+15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1700 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 600 A, VCE = 900 V VGE = ±15 V RGon = 2,4 Ω Tvj = 25°C Tvj = 125°C Anstiegszeit,induktiveLast Risetime,inductiveload IC = 600 A, VCE = 900 V VGE = ±15 V RGon = 2,4 Ω Tvj = 25°C Tvj = 125°C Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload IC = 600 A, VCE = 900 V VGE = ±15 V RGoff = 3,0 Ω Tvj = 25°C Tvj = 125°C Fallzeit,induktiveLast Falltime,inductiveload IC = 600 A, VCE = 900 V VGE = ±15 V RGo...


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