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N0132S

Part Number	N0132S
Manufacturer	InterFET
Description	Process Geometry
Published	Jun 13, 2020
Detailed Description	InterFET Product Folder Technical Support Order Now N0132S N0132S Process Geometry Features • Low Noise: 1.2 nV/√H...
Datasheet	N0132S PDF File

Overview

InterFET Product Folder Technical Support Order Now N0132S N0132S Process Geometry Features • Low Noise: 1.
2 nV/√Hz Typical • Typical Input Capacitance: 13pF • Typical Breakdown Voltage: -45V • High Input Impedance • Small Die: 518um X 518um X 203um • Bond Pads: 90um X 90um • Substrate Connected to Gate • Au Back-Side Finish Applications • Low Noise Amplifier • Audio Amplifiers • Mid to High-Gain Applications • Matched Pair Applications • Custom Part Options Description The InterFET N0132S Geometry is ideal for low noise high gain applications.
Similar features to the N0132L Geometry with higher BV and lower input capacitance.
Geometry Top View 132 G S-D S-D G Test Pattern Sta...

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