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IDH08G65C6

Infineon
Part Number IDH08G65C6
Manufacturer Infineon
Description SiC Schottky Diode
Published Jun 14, 2020
Detailed Description IDH08G65C6 6th Generation CoolSiC™ 650V SiC Schottky Diode The CoolSiC™ generation 6 (G6) is the leading edge technolog...
Datasheet PDF File IDH08G65C6 PDF File

IDH08G65C6
IDH08G65C6

Overview
IDH08G65C6 6th Generation CoolSiC™ 650V SiC Schottky Diode The CoolSiC™ generation 6 (G6) is the leading edge technology from Infineon for the SiC Schottky barrier diodes.
The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system.
The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF).
The CoolSiC™ Schottky diode 650 V G6 has been designed to complement our 600 V and 650 V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range.
Table 1 Key performance parameters Parameter Value Unit VRRM 650 V QC (VR = 400 V) 12.
2 nC EC (VR = 400 V) 2.
2 µJ IF (TC ≤ 145 °C, D = 1) 8 A VF (IF = 8 A, Tj = 25 °C) 1.
25 V PG-TO220-2 CASE 1) Cathode 1 2) Anode 2 Table 2 Package information Type / ordering Code Package IDH08G65C6 PG-TO220-2 Marking D0865C6 Features  Best in class forward voltage (1.
25 V)  Best in class figure of merit (Qc x VF)  High dv/dt ruggedness (150 V/ns) Benefits  System efficiency improvement  System cost and size savings due to the reduced cooling requirements  Enabling higher frequency and increased power density Potential Applications  Power factor correction in SMPS  Solar inverter  Uninterruptible power supply Product Validation  Qualified for industrial applications according to the relevant tests of JEDEC (J-STD20 and JESD22) Final Datasheet Please read the Important Notice and Warnings at the end of this document Rev.
2.
0, 2017-05-23 6th Generation CoolSiCTM IDH08G65C6 Table of Content 1 Maximum ratings .
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3 2 Thermal characteristics .
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3 3 Electrical characteristics .
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