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TIM7179-30UL

Toshiba
Part Number TIM7179-30UL
Manufacturer Toshiba
Description MICROWAVE POWER GaAs FET
Published Jun 19, 2020
Detailed Description FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.0dBm at 7.1GHz to 7.9GHz ･HIGH GAIN G1dB= 8.5dB at 7.1G...
Datasheet PDF File TIM7179-30UL PDF File

TIM7179-30UL
TIM7179-30UL

Overview
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.
0dBm at 7.
1GHz to 7.
9GHz ･HIGH GAIN G1dB= 8.
5dB at 7.
1GHz to 7.
9GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7179-30UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 6.
4A f = 7.
1 to 7.
9GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 34.
0dBm, f= 5MHz (Single Carrier Level) A Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X R...


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