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TIM1414-18L-252

Part Number	TIM1414-18L-252
Manufacturer	Toshiba
Description	MICROWAVE POWER GaAs FET
Published	Jun 19, 2020
Detailed Description	MICROWAVE POWER GaAs FET TIM1414-18L-252 FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.0dBm at 13.75G...
Datasheet	TIM1414-18L-252 PDF File

Overview

MICROWAVE POWER GaAs FET TIM1414-18L-252 FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.
0dBm at 13.
75GHz to 14.
5GHz ŋHIGH GAIN G1dB= 6.
0dB at 13.
75GHz to 14.
5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25dBc(Min.
) at Pout= 36dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current SYMBOL CONDITIONS P1dB G1dB IDS1 VDS= 9V IDSset= 4.
4A f= 13.
75 to 14.
5GHz UNIT dBm dB A Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test dBc Po= 36dBm, f= 5MHz (Single Carrier Level) A (VDS  IDS  Pin  P1dB)  Rth(c-c) °C Recommended Gate Resistance(Rg): 100  MIN.
41.
5 5.
0   -25   TYP.
MAX.
42.
0  6.
0  5.
5 6.
0 28    5.
5 6.
0  100 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-of...

Similar Datasheet

TIM1414-18L-252 MICROWAVE POWER GaAs FET - Toshiba

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