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TGI7785-130LHA

Part Number	TGI7785-130LHA
Manufacturer	Toshiba
Description	MICROWAVE POWER GaN HEMT
Published	Jun 20, 2020
Detailed Description	MICROWAVE POWER GaN HEMT TGI7785-130LHA FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 51.0dBm at Pin= 4...
Datasheet	TGI7785-130LHA PDF File

Overview

MICROWAVE POWER GaN HEMT TGI7785-130LHA FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 51.
0dBm at Pin= 44dBm ŋHIGH GAIN GL= 11.
5dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION IM3= -25dBc(Min.
) at Pout= 44dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN.
TYP.
MAX.
Output Power Drain Current Power Added Efficiency Pout IDS1 add VDS= 40V IDSset= 0.
8A f= 7.
7 to 8.
5GHz @Pin= 44dBm dBm 50.
0 51.
0  A  7.
0 9.
0 %  36  Linear Gain Gain flatness GL @Pin= 20dBm G dB 10.
5 11.
5  dB   ±0.
8 3rd Order Intermodulation Distortion Drain Current Channel Temperature Ri...

Similar Datasheet

TGI7785-130LHA MICROWAVE POWER GaN HEMT - Toshiba

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