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TGM9398-25

Toshiba
Part Number TGM9398-25
Manufacturer Toshiba
Description MICROWAVE POWER GaN AMPLIFIER
Published Jun 20, 2020
Detailed Description FEATURES ･BROAD BAND 2-STAGE AMPLIFIER ･HIGH POWER Pout= 44.0dBm at Pin= 23.0dBm ･HIGH GAIN GL= 24dB(Typ) at Pin= 7dBm ･...
Datasheet PDF File TGM9398-25 PDF File

TGM9398-25
TGM9398-25

Overview
FEATURES ･BROAD BAND 2-STAGE AMPLIFIER ･HIGH POWER Pout= 44.
0dBm at Pin= 23.
0dBm ･HIGH GAIN GL= 24dB(Typ) at Pin= 7dBm ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaN AMPLIFIER TGM9398-25 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power Drain Current Power Added Efficiency Linear Gain IDD=IDD1+ IDD2 SYMBOL CONDITIONS Pout IDD* add VDD1,VDD2= 24V IDDset= 1.
2A @Pin= 23.
0dBm f = 9.
3 to 9.
8GHz GL @Pin= 7dBm UNIT dBm A % dB MIN.
43.
0   20 TYP.
MAX.
44.
0  2.
6 3.
5 38  24  ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL Drain- Source Voltage VDD1, VDD2 Gate- Source Voltage VGG1,VGG2 Drain Current IDD1 IDD2 Flange Temperature Tf Input Power Pin Storage Temperature Tstg UNIT V V A A °C dBm °C RATING 50 -10 1.
25 7.
5 -40 to +90 +27 -65 to +175  The information contained herein is presented as guidance for product use.
No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter...


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