DatasheetsPDF.com

TGI1314-50LA

Part Number	TGI1314-50LA
Manufacturer	Toshiba
Description	MICROWAVE POWER GaN HEMT
Published	Jun 20, 2020
Detailed Description	MICROWAVE POWER GaN HEMT TGI1314-50LA FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 42....
Datasheet	TGI1314-50LA PDF File

Overview

MICROWAVE POWER GaN HEMT TGI1314-50LA FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.
0dBm at Pin= 42.
0dBm ･HIGH GAIN GL= 8.
0dB at 13.
75GHz to 14.
5GHz ･LOW INTERMODULATION DISTORTION IM3(Min.
)= -25dBc at Pout= 40.
0dBm (Single Carrier Level) ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS Output Power Drain Current Power Added Efficiency Pout IDS1 PAE VDS= 24V IDSset= 2.
0A f = 13.
75 to 14.
5GHz @Pin= 42dBm Linear Gain Gain Flatness GL @Pin= 20dBm G 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IM3 IM3-2 IDS2 Tch Two-tone Test Po= 40.
0dBm (Single Carrier Level) f= 5MHz (IM3) f= 150MHz (IM3-2) (VDS X IDS + Pin – Pout) X Rth(c-c) Recommended Gate Resistance(Rg): 13.
3  UNIT dBm A % dB dB dBc dBc A °C MIN.
46.
0   7.
0  TYP.
47.
0 5.
0 29 8.
0  MAX.
 6.
0   ±0.
8 -25 -27  -25 -27   3.
5 4.
5  130 160 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS CONDITIONS VDS= 5V IDS= 5.
0A VDS= 5V IDS= 23mA VDS= 5V VGS= 0V VGSO IGS= -10mA Rth(c-c) Channel to Case UNIT MIN.
TYP.
MAX.
S  4.
5  V -1.
0 -4.
0 -6.
0 A  18  V -10   °C/W  1.
4 1.
6  The information contained herein is presented as guidance for product use.
No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for any infringement of patents or any other intellectual property rights of third parties that may result from the use of product.
No license to any intellectual property right is granted by this document.
The information contained herein is subject to change without prior notice.
It is advisable to contact TISS before proceeding with design of equipment incorporating this product.
© 2018 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All ...

Similar Datasheet

TGI1314-50LA MICROWAVE POWER GaN HEMT - Toshiba

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)