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TGI5059-120L

Part Number	TGI5059-120L
Manufacturer	Toshiba
Description	MICROWAVE POWER GaN HEMT
Published	Jun 20, 2020
Datasheet	TGI5059-120L PDF File

Features

･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER
Pout= 51.0dBm at Pin= 42.0dBm ･HIGH GAIN
GL= 13.5dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION
IM3(Min.)= -25dBc at Pout= 44.0dBm Single Carrier Level
･HERMETICALLY SEALED PACKAGE

RF PERFORMANCE S...

Similar Datasheet

TGI5059-120L MICROWAVE POWER GaN HEMT - Toshiba

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