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TIM7785-60ULA

Part Number	TIM7785-60ULA
Manufacturer	Toshiba
Description	MICROWAVE POWER GaAs FET
Published	Jun 20, 2020
Detailed Description	MICROWAVE POWER GaAs FET TIM7785-60ULA FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 48.0dBm at 7.7GHz t...
Datasheet	TIM7785-60ULA PDF File

Overview

MICROWAVE POWER GaAs FET TIM7785-60ULA FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 48.
0dBm at 7.
7GHz to 8.
5GHz ŋHIGH GAIN G1dB= 7.
5dB at 7.
7GHz to 8.
5GHz ŋLOW INTERMODULATION DISTORTION IM3(MIN.
)= -25dBc at Pout= 41dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 9.
5A f= 7.
7 to 8.
5GHz UNIT dBm dB A dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test Po= 41dBm, f= 5MHz dBc (Single Carrier Level) A (VDS  IDS  Pin  P1dB)  Rth(c-c) °C Recommended Gate Resistance(Rg): 28  MIN.
47.
0 6.
5    -25   TYP.
MAX.
48.
0  7.
5  14.
5 16.
0  0.
8 36  -30   13.
1  100 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Tra...

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TIM7785-60ULA MICROWAVE POWER GaAs FET - Toshiba

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