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TIM5964-16SL-422

Part Number	TIM5964-16SL-422
Manufacturer	Toshiba
Description	MICROWAVE POWER GaAs FET
Published	Jun 20, 2020
Detailed Description	FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 5.85GHz to 6.75GHz ･HIGH GAIN G1dB= 8.0dB(min.)...
Datasheet	TIM5964-16SL-422 PDF File

Overview

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.
5dBm at 5.
85GHz to 6.
75GHz ･HIGH GAIN G1dB= 8.
0dB(min.
) at 5.
85GHz to 6.
75GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 31.
5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5964-16SL-422 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 4.
4A f = 5.
85 to 6.
75GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 31.
5dBm, ...

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TIM5964-16SL-422 MICROWAVE POWER GaAs FET - Toshiba

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