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TIM1213-15L

Toshiba
Part Number TIM1213-15L
Manufacturer Toshiba
Description MICROWAVE POWER GaAs FET
Published Jun 20, 2020
Detailed Description FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.0dBm at 12.7GHz to 13.2GHz ･HIGH GAIN G1dB= 6.0dB at 12...
Datasheet PDF File TIM1213-15L PDF File

TIM1213-15L
TIM1213-15L

Overview
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.
0dBm at 12.
7GHz to 13.
2GHz ･HIGH GAIN G1dB= 6.
0dB at 12.
7GHz to 13.
2GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 30.
0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1213-15L RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 9V IDSset= 4.
0A f = 12.
7 to 13.
2GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 30.
0dBm, f= 5MHz (S...


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