･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 42.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN
G1dB= 9.5dB at 6.4GHz to 7.2GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM6472-16UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTI...
TIM6472-16UL PDF File
