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CMPA1D1E080F

CREE
Part Number CMPA1D1E080F
Manufacturer CREE
Description Power Amplifier
Published Jun 22, 2020
Detailed Description CMPA1D1E080F 80 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN, Power Amplifier Cree’s CMPA1D1E080F is a Gallium Nitride (GaN) ...
Datasheet PDF File CMPA1D1E080F PDF File

CMPA1D1E080F
CMPA1D1E080F

Overview
CMPA1D1E080F 80 W, 13.
75 - 14.
5 GHz, 40 V, Ku-Band GaN, Power Amplifier Cree’s CMPA1D1E080F is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) based Monolithic Microwave Integrated Circuit (MMIC).
It is designed specifically for high efficiency, high gain, and wide bandwidth capabilities while meeting OQPSK linearity, which makes CMPA1D1E080F ideal for 13.
75 - 14.
5 GHz commercial Ku Band satellite communications applications.
The transistor is supplied in a 14 lead metal/ceramic flange package.
PaPcNka:gCeMTPyAp1eD:414E0028202F Typical Performance Over 13.
75 - 14.
5 GHz (TC = 25˚C) Parameter 13.
75 GHz 14 GHz 14.
25 GHz 14.
5 GHz Units Small Signal Gain 28.
8 28.
3 29 2...


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