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10A01

EIC

SILICON RECTIFIER DIODE

www.eicsemi.com 10A01-10A07 SILICON RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 10 Amperes FEATURES : * Diffused Junc...


EIC

10A01

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www.eicsemi.com 10A01-10A07 SILICON RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 10 Amperes FEATURES : * Diffused Junction * High current capability and Low Forward Voltage Drop * Surge Overload Rating to 400A Peak * Low Reverse Leakage Current * Pb / RoHS Free MECHANICAL DATA : * Case : molded plastic * Epoxy : UL94V-0 rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 2.049 grams D6 0.360 (9.1) 0.340 (8.6) 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. 0.360 (9.1) 0.340 (8.6) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL 10A01 10A02 10A03 10A04 10A05 10A06 10A07 UNIT Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Average Rectified Output Current (Note 1) Ta = 50 °C Non-Repetitive Peak Forward Surge Current 8.3 ms VRRM VRMS VDC IO 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V 50 100 200 400 600 800 1000 V 10 A Single half sine wave superimposed on rated load IFSM 400 A (JEDEC Method) Maximum Forward Voltage at IF = 10 Amps. VF Maximum DC Reverse Current Ta = 25 °C IR at rated DC Blocking Voltage Ta = 100 °C IR(H) Typical Junction Capacitance...




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