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HMC716LP3E

Analog Devices
Part Number HMC716LP3E
Manufacturer Analog Devices
Description GAAS PHEMT MMIC
Published Jun 29, 2020
Detailed Description HMC716LP3E v03.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9GHz LOW NOISE AMPLIFIERS - SMT Typical Application...
Datasheet PDF File HMC716LP3E PDF File

HMC716LP3E
HMC716LP3E


Overview
HMC716LP3E v03.
1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 3.
1 - 3.
9GHz LOW NOISE AMPLIFIERS - SMT Typical Applications Features The HMC716LP3E is ideal for: Noise Figure: 1 dB • Fixed Wireless and LTE/WiMAX/4G Gain: 18 dB • BTS & Infrastructure Output IP3: +33 dBm • Repeaters and Femtocells • Public Safety Radio • Access Points OLETE Functional Diagram Single Supply: +3V to +5V 50 Ohm Matched Input/Output 16 Lead 3x3mm QFN Package: 9 mm2 General Description The HMC716LP3E is a GaAs pHEMT MMIC Low Noise Ampli er that is ideal for xed wireless and LTE/WiMAX/4G basestation front-end receivers operating between 3.
1 and 3.
9 GHz.
The ampli er has been optimized to provide 1 dB noise gure, 18 dB gain and +33 dBm output IP3 from a single supply of +5V.
Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components.
The HMC716LP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application.
BS Electrical Speci cations TA = +25 °C, Rbias = 820Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V [1] OParameter Vdd = +3V Min.
Typ.
Max.
Vdd = +5V Units Min.
Typ.
Max.
Frequency Range 3.
1 - 3.
9 3.
1 - 3.
9 MHz Gain 13 17 15.
5 18 dB Gain Variation Over Temperature 0.
01 0.
01 dB/ °C Noise Figure 1 1.
3 1 1.
3 dB Input Return Loss 25 30 dB Output Return Loss 13 16 dB Output Power for 1 dB Compression (P1dB) 12 15 16 19 dBm Saturated Output Power (Psat) 16.
5 20.
5 dBm Output Third Order Intercept (IP3) 26 33 dBm Supply Current (Idd) 41 55 65 90 mA [1] Rbias resistor sets current, see application circuit herein 1 IrrliniecgfseohFpntrsomsoenoarsftiisibtophingilrirrtdyafiucnpirstnaeeairdst,sihesbesduydmtehimebaldtypi vmlbiAceyaanPyArtaioyrlhnoenagsolauoonlDrgtneofeDrdvtoh:eimcevt9ericowist7esissip8usefso-lbeuar2.
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